tsm 8 n 8 0 8 00v n - channel power mosfet 1 / 10 version: c13 product summary v ds (v) r ds(on) ( ) i d (a) 800 1. 4 @ v gs =10v 8 to - 220 ito - 220 general description the tsm 8 n 8 0 n - channel enhancement mode power mosfet is produced by planar stripe dmos technology. this advanced technology has been e specially tailored to minimize on - state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. these devices are well suited for high efficiency switch mode power supply, electronic lamp b allast based on half bridge. features low r ds(on) 1.4 (max.) low gate charge typical @ 41 nc (typ.) improve dv/dt capability ordering information part no. package packing tsm 8 n 8 0cz c0 to - 220 50pcs / tube tsm 8 n 8 0cz c0 g to - 220 50pcs / tube tsm 8 n 8 0ci c0 g ito - 220 50pcs / tube note: g denote for halogen f ree product absolute maximum rating ( ta = 25 o c unless otherwise noted ) parameter symbol to - 220 ito - 220 unit drain - source voltage v ds 8 00 v gate - source voltage v gs 30 v t c = 25 o c 8 8 * continuous drain current t c = 100 o c i d 4.9 4.9 * a pulsed dra in current * i dm 32 32 * a peak d iode recovery dv/dt (note 4 ) dv/dt 4.5 v single pulse avalanche energy (note 2 ) e as 17 1 mj avalanche current (repetitive) (note 1) i ar 8 a repetitive avalanche energy (note 1) e a r 25 mj tc = 25 o c 250 40.3 w power dissipation derate above 25 p d 2 0.3 2 ? /w operating junction temperature t j 150 ? storage temperature range t stg - 55 to +150 o c * limited by maximum junction temperature block diagram n - channel mosfet pin definition: 1. gate 2. drain 3. source
tsm 8 n 8 0 8 00v n - channel power mosfet 2 / 10 version: c13 thermal performance parameter symbol to - 220 ito - 220 unit thermal resistance - junction to case r? jc 0.5 3. 1 thermal resistance - junction to ambient r? ja 62.5 o c/w note s : surface mounted on fr4 board t 10sec electrical specifications ( t c = 25 o c unless otherwise noted ) parameter conditions symbol min typ max u nit static drai n - source breakdown voltage v gs = 0 v, i d = 250ua bv dss 8 00 -- -- v drain - source on - state resistance v gs = 10v, i d = 4 .0 a r ds(on) -- 1.1 1.4 gate threshold voltage v ds = v gs , i d = 250ua v gs(th) 2 .0 -- 4 .0 v zero gate voltage drain current v ds = 8 00v, v g s = 0v i dss -- -- 1 0 ua gate body leakage v gs = 30v, v ds = 0v i gss -- -- 100 na forward transconductance v ds = 3 0v, i d = 4 .0 a g fs -- 7 -- s diode forward voltage i s = 8 a, v gs = 0v v sd -- -- 1. 5 v dynamic b total gate charge q g -- 41 -- gate - source charge q gs -- 10 -- gate - drain charge v ds = 64 0v, i d = 8 a, v gs = 10v q gd -- 1 1 -- nc input capacitance c iss -- 1921 -- output capacitance c oss -- 146 -- reverse transfer capacitance v ds = 25v, v gs = 0v, f = 1.0mhz c rss -- 1 2 -- pf switchi ng c turn - on delay time t d(on) -- 133 -- turn - on rise time t r -- 3 0 -- turn - off delay time t d(off) -- 1 72 -- turn - off fall time v gs = 10v, i d = 8 a, v dd = 40 0 v, r g = 25 t f -- 37 -- ns reverse recovery time t f r -- 4 7 9 -- ns reverse recovery charge v gs = 0v, i s = 8 a , di f /dt = 100a/us q f r -- 5.5 -- uc notes: 1. repetitive rating: pulse width limited by maximum junction temperature 2. max rating e as test condition: v dd = 50v, i as = 8 a , l= 5 mh, r g =25 , starting t j =25 3. guaranteed 1 00% e as test condition: v dd = 50v, i as = 8 a , l= 1 mh, r g =25 , starting t j =25 4. i s d 8 a, di/dt 200a/us, vdd bv , starting t j =25 5. p ulse test: pulse width 300us, duty cycle 2% 6. b for design reference only, not subject to production testing. 7. c switching time is essentially independent of operating temperature.
tsm 8 n 8 0 8 00v n - channel power mosfet 3 / 10 version: c13 electrical characteristics curve ( t c = 25 o c , unless otherwise noted ) output characteristics transfer characteristics on - resistance vs. drain current gate charge on - resistance vs. junction temperature source - d rain diode forward voltage
tsm 8 n 8 0 8 00v n - channel power mosfet 4 / 10 version: c13 electrical characteristics curve ( ta = 25 o c , unless otherwise noted ) drain current vs. case temperature bv dss vs. junction temperature maximum safe operating area capacitance vs. drain - source voltage maximum safe operating area (ito - 220)
tsm 8 n 8 0 8 00v n - channel power mosfet 5 / 10 version: c13 electrical characteristics curve ( ta = 25 o c , unless otherwise noted ) normalized thermal transient impedance, junction - to - ambient normalized thermal transient impedance, junction - to - ambient (ito - 220)
tsm 8 n 8 0 8 00v n - channel power mosfet 6 / 10 version: c13 gate charge test circuit & waveform resistive switching test circuit & waveform e as test circuit & waveform
tsm 8 n 8 0 8 00v n - channel power mosfet 7 / 10 version: c13 diode reverse recovery time test circuit & waveform
tsm 8 n 8 0 8 00v n - channel power mosfet 8 / 10 version: c13 to - 220 mechanical drawing unit: millimeters marki ng diagram y = year code m = month code ( a =jan, b =feb, c =mar, d =apl, e =may, f =jun, g =jul, h =aug, i =sep, j =oct, k =nov, l =dec) = month code for halogen free product ( o =jan, p =feb, q =mar, r =apl, s =may, t =jun, u =jul, v =aug, w =sep, x =oct, y =n ov, z =dec) l = lot code
tsm 8 n 8 0 8 00v n - channel power mosfet 9 / 10 version: c13 ito - 220 mechanical drawing unit: millimeters marking diagram y = year code g = halogen free ww = week code by calendar year f = factory code
tsm 8 n 8 0 8 00v n - channel power mosfet 10 / 10 version: c13 notice specifications of the products displayed herein are subject to change without notice. tsc or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies. information contained herein is intended to provide a product description only. no license, express or implied, to any intellectual property rights is granted by this document. except as provided in tsc s terms and conditions of sale for such products, tsc assumes no liability whatsoever, and disclaims any e xpress or implied warranty, relating to sale and/or use of tsc products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right. the pr oducts shown herein are not designed for use in medical, life - saving, or life - sustaining applications. customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify tsc for any damages resulting from such improper use or sale.
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